#7840. Bottom-up water-based solution synthesis for a large MoS2 atomic layer for thin-film transistor applications

October 2026publication date
Proposal available till 15-05-2025
4 total number of authors per manuscript0 $

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Journal’s subject area:
Mechanical Engineering;
Mechanics of Materials;
Condensed Matter Physics;
Materials Science (all);
Chemistry (all);
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Abstract:
A bottom-up water-based solution-process method was developed for atomic layered MoS2 with a one-step annealing process and no sulfurization. The chosen MoS2 precursor is water soluble and was carefully formulated to obtain good coating properties on a silicon substrate. The coated precursor was annealed in a furnace one time to crystallize it. This method can obtain a large and uniform atomic layer of 2D MoS2 with 2H lattice structure.
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