#7195. Effects of doping Y2O3 on the microstructure and electrical properties of ZnO-Bi2O3?based varistor ceramics
January 2027 | publication date |
Proposal available till | 11-05-2025 |
4 total number of authors per manuscript | 0 $ |
The title of the journal is available only for the authors who have already paid for |
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Journal’s subject area: |
Mechanics of Materials;
Electrical and Electronic Engineering;
Materials Chemistry;
Condensed Matter Physics;
Ceramics and Composites;
Electronic, Optical and Magnetic Materials; |
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Abstract:
ZnO-based varistor ceramics doped with different amount of Y2O3 have been made by two-step solid-state reaction route including the pre-calcination and subsequent sintering procedures, using nanosized ZnO powder and corresponding additives as the raw material. The phase composition, microstructure and electrical properties were studied by means of X-ray diffractometry (XRD), scanning electron microscopy (SEM) and direct current electrical measurement. It was found that the electrical properties of the varistor ceramics sintered at 950 °C from the powder pre-calcined at 800 °C were enhanced by doped appropriate amount of Y2O3. Particularly, ZnO varistors doped with 1.2 mol% Y2O3 possessed the best comprehensive electrical properties with the breakdown field of 2113 V/mm, the nonlinear coefficient of 184.6 and the leakage current of 0.4 ?A. Y2O3 phase, Y-rich phase and the other secondary phase particles were confirmed to distribute along the grain boundaries of predominant ZnO grains from XRD and SEM analyses. The results illustrated that doping Y2O3 should be a promising route to obtain varistor ceramics with excellent electrical properties.
Keywords:
Electrical properties; Grain size; Microstructure; Y2O3; ZnO-Bi2O3-based varistor
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