#7774. Generation, relaxation and annealing of Si/SiO2 charges induced by low-energy electron beam

May 2027publication date
Proposal available till 28-05-2025
4 total number of authors per manuscript0 $

The title of the journal is available only for the authors who have already paid for
Journal’s subject area:
Engineering (all);
Biochemistry, Genetics and Molecular Biology (miscellaneous);
Medicine (miscellaneous);
Chemical Engineering (all);
Materials Science (all);
Physics and Astronomy (all);
Places in the authors’ list:
place 1place 2place 3place 4
FreeFreeFreeFree
2350 $1200 $1050 $900 $
Contract №7774.1 Contract №7774.2 Contract №7774.3 Contract №7774.4
1 place - free (for sale)
2 place - free (for sale)
3 place - free (for sale)
4 place - free (for sale)

Abstract:
Silicon oxide based, aluminum gated MOS structures fabricated on n-type silicon were subjected to a low energy electron beam irradiation in the scanning electron microscope. The induced interface states and the oxide charges were studied by the high frequency capacitance–voltage technique as a function of the electron beam energy, irradiation dose, annealing time, temperature and electric field.
Keywords:
Electron beam irradiation; Interface states; MOS devices; Oxide charge; Silicon oxide

Contacts :
0