#7651. A passive compensator for imbalances in current sharing of parallel-siC MOSFETs based on planar transformer
October 2026 | publication date |
Proposal available till | 23-05-2025 |
4 total number of authors per manuscript | 0 $ |
The title of the journal is available only for the authors who have already paid for |
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Journal’s subject area: |
Electrical and Electronic Engineering; |
Places in the authors’ list:
1 place - free (for sale)
2 place - free (for sale)
3 place - free (for sale)
4 place - free (for sale)
Abstract:
SiCMOSFETs are widely employed in power converters due to their high switching speed and low switching loss. However, their low current rating due to the limited active area restricts their high power applications. To apply SiC MOSFETs in high power applications, providing parallel connection is an inevitable choice. To tackle the challenge of imbalanced current sharing problem between parallel SiC MOSFETs, a new passive compensator based on planar transformer (PT) is proposed here.
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