#7394. The in-plane graphene and borophene?12 contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors

September 2026publication date
Proposal available till 17-05-2025
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Journal’s subject area:
Mechanical Engineering;
Mechanics of Materials;
Condensed Matter Physics;
Materials Science (all);
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Abstract:
Using ab initio quantum transport calculations, we investigate the performance of the in-plane (IP) graphene and borophene?12 contacted sub-10 nm (gate length = 5.1, 6.1, 7.3, 8.8 nm) single-gated (SG) and double-gated (DG) monolayer (ML) black phosphorous (BP) Schottky barrier field-effect transistors (SBFETs). The transfer characteristics, total gate capacitance, intrinsic delay time and dynamic power indicator are studied.
Keywords:
2D metal electrode; Black phosphorous; Edge contact; Schottky barrier field-effect transistors

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