#7329. Bias Stress Stability and Hysteresis in Elastomeric Dielectric Based Solution Processed OFETs

October 2026publication date
Proposal available till 13-05-2025
4 total number of authors per manuscript0 $

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Journal’s subject area:
Mechanical Engineering;
Mechanics of Materials;
Condensed Matter Physics;
Materials Science (all);
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Abstract:
Organic field-effect transistors are an integral part of future organic electronics and in the past few years a tremendous improvement in its performance is observed. However, considering the implementation in practical devices, they need further improvement in areas like electrical and environmental stability. The present study investigates the various factors affecting bias stress and hysteresis behaviour of an elastomeric gate dielectric called poly (dimethylsiloxane) (PDMS) based solution-processed organic field-effect transistors.
Keywords:
Anomalous bias stress; Atmospheric factors; Hysteresis; OFET; PDMS

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