#7326. Evolution of growth characteristics around the junction in the mosaic diamond

October 2026publication date
Proposal available till 28-05-2025
4 total number of authors per manuscript0 $

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Journal’s subject area:
Mechanical Engineering;
Materials Chemistry;
Electrical and Electronic Engineering;
Electronic, Optical and Magnetic Materials;
Chemistry (all);
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Abstract:
In order to realize the practical use of diamond as a semiconductor material, large-area single-crystal diamond wafers with uniform quality are required. Mosaic growth is an effective method to produce inch-grade single-crystal diamonds. However, the quality of the wafer is limited by the junction interface seriously, because cracking occurs easily due to the high internal stress. In this paper, the repetition growth method was adopted to grow mosaic splicing single-crystal diamond without polycrystalline diamond interface.
Keywords:
Epitaxial growth; Junction; Mosaic diamond; Stress

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