#6647. Optimizing Vertical Crystallization for Efficient Perovskite Solar Cells by Buried Composite Layers
November 2026 | publication date |
Proposal available till | 30-05-2025 |
4 total number of authors per manuscript | 0 $ |
The title of the journal is available only for the authors who have already paid for |
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Journal’s subject area: |
Electrical and Electronic Engineering;
Energy Engineering and Power Technology;
Atomic and Molecular Physics, and Optics;
Electronic, Optical and Magnetic Materials; |
Places in the authors’ list:
1 place - free (for sale)
2 place - free (for sale)
3 place - free (for sale)
4 place - free (for sale)
Abstract:
Planar-heterojunction perovskite solar cells (PSCs) have experienced rapid evolution in recent years because of the low-temperature processing, suitable alignment, and high mobility of the tin oxide buried contact layer. However, improper SnO2 surface states and poor crystallinity of the top perovskite films are still the main obstacles for the planar PSCs in which performance always lags behind their mesoporous counterparts. Herein, a new buried contact is reported by introducing graphitic carbon nitride (g-C3N4) into the commonly used SnO2 which performs outstanding transmittance, conductivity, and surface states for a high-quality electron-transporting layer. Moreover, the vertical composition and crystallinity of the top perovskite film are manipulated by rich amino groups on the edge of the g-C3N4 nanosheets which induce the prenucleation of the lead-rich species at the buried interface.
Keywords:
graphitic carbon nitride nanosheets; high-quality buried composite layers; planar-heterojunction perovskite solar cells; vertical crystallization manipulation
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