#6637. On the role of Mg content in Mg2(Si,Sn): Assessing its impact on electronic transport and estimating the phase width by in situ characterization and modelling

December 2026publication date
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Journal’s subject area:
Physics and Astronomy (miscellaneous);
Materials Science (all);
Energy (miscellaneous);
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Abstract:
Carrier transport in Mg2Si1-xSnx thermoelectrics was experimentally found to be highly sensitive to high temperature heat treatment and in particular the role of the precise Mg content has been discussed controversially. Considering this, electrical transport properties of Sb doped Mg2Si0.4Sn0.6 were measured in-situ during annealing at 710 K. We measured two quasi-identical samples: sample 1, for the Seebeck coefficient and the electrical conductivity (?) measurement in helium, and sample 2 for Hall coefficient and ? measurement in vacuum, respectively.
Keywords:
Carrier transport; In-situ annealing; Mg-related defects; Mg2Si1-xSnx; Modelling transport properties

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