#6646. A Universal and Facile Method of Tailoring the Thickness of Mo(Sx,Se1?x)2, Contributing to Highly Efficient Flexible Cu2ZnSn(S,Se)4 Solar Cells

December 2026publication date
Proposal available till 30-05-2025
4 total number of authors per manuscript0 $

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Journal’s subject area:
Electrical and Electronic Engineering;
Energy Engineering and Power Technology;
Atomic and Molecular Physics, and Optics;
Electronic, Optical and Magnetic Materials;
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Abstract:
Flexible Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have attracted considerable attention due to their potential application in specific areas such as power sources for wearable electronics. However, the over-thick Mo(Sx,Se1?x)2 at the back contact is one of the factors that limit the device performance. Herein, a facile strategy to inhibit the thick Mo(Sx,Se1?x)2 layer by adding a proper proportion of sulfur during selenization is reported. It is found that the thickness of Mo(Sx,Se1?x)2 can be effectively tailored via tuning the proportion of S, enabling a substantial decrease in series resistance. The suppression mechanism is mainly ascribed to the change of orientation of Mo(Sx,Se1?x)2 induced by S, which limits the diffusion of Se to Mo.
Keywords:
back contacts; Cu2ZnSn(S, Se)4 thin films; flexible solar cells; Mo(Sx,Se1?x)2 layers

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